BUX83 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
BUX83 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUX82/83
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BUX82
400
V(BR)CEO
Collector-Emitter
Breakdown Voltage
IC= 100mA ; IB= 0; L= 25mH
V
BUX83
450
BUX82
500
V(BR)CER
Collector-Emitter
Breakdown Voltage
IC= 100mA ; RBE= 100Ω; L= 15mH
V
BUX83
500
VCE(sat)-1
Collector-Emitter
Saturation Voltage
BUX82
BUX83
IC= 4A; IB=B 1.25A
3.0
V
1.6
Collector-Emitter
VCE(sat)-2 Saturation Voltage
BUX82
BUX83
IC= 2.5A; IB= 0.5A
1.5
V
1.4
VBE(sat)-1 Base-Emitter Saturation Voltage
VBE(sat)-2 Base-Emitter Saturation Voltage
ICES
Collector
Cutoff Current
BUX82
BUX83
IEBO
Emitter Cutoff Current
IC= 4A; IB=B 1.25A
IC= 2.5A; IB= 0.5A
VCES=800V; VBE(off)= 1.5V
VCES=800V; VBE(off)= 1.5V,TC=125℃
VCES=1000V;VBE(off)=1.5V
VCES=1000V;VBE(off)=1.5V,TC=125℃
VEB= 10V; IC=0
1.6
V
1.4
V
1.0
2.0
mA
1.0
2.0
10 mA
hFE
DC Current Gain
IC= 1.2A ; VCE= 5V
30
COB
Output Capacitance
IE= 0;VCB= 10V;ftest= 1MHz
fT
Current-Gain--Bandwidth Product IC= 0.2A ; VCE= 10V ;ftest= 1MHz
Switching Times
500 pF
6
MHz
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 2.5A; IB1= 0.5A;IB2= -1A;
VCC= 250V
0.3 0.5 μs
2.0 3.5 μs
0.3
μs
isc Website：www.iscsemi.cn
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