Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYQ28E, BYQ28EB, BYQ28ED series
I
F
dI
F
dt
t
rr
time
Q
s
I
R
I
rrm
10% 100%
Fig.1. Definition of trr1, Qs and Irrm
R
Voltage Pulse Source
D.U.T.
Current
shunt
to ’scope
Fig.4. Circuit schematic for trr2
IF
time
VF
VF
Fig.2. Definition of Vfr
V fr
time
0.5A
IF
0A
I rec = 0.25A
IR
trr2
I = 1A
R
Fig.5. Definition of trr2
PF / W
8
Vo = 0.748 V
7 Rs = 0.0293 Ohms
BYQ28
Tmb(max) / C
110
D = 1.0 115
6
120
5
0.5
125
4
0.2
130
0.1
3
135
2
I
tp
D
=
tp
T
140
1
T
t
145
0
150
0
1
2
3
4
5
6
7
8
IF(AV) / A
Fig.3. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
6 PF / W
Vo = 0.748 V
Rs = 0.0293 Ohms
5
4
3
4
BYQ28
Tmb(max) / C
120
a = 1.57
125
1.9
2.2
130
2.8
135
2
140
1
145
0
150
0
1
2
3
4
5
6
IF(AV) / A
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
October 1998
3
Rev 1.300