Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYQ28E, BYQ28EB, BYQ28ED series
1000 trr / ns
100
IF=5A
IF=1A
10
1
1
10
100
dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Irrm / A
10
1
IF=5A
0.1
IF=1A
0.01
1
10
100
-dIF/dt (A/us)
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
15 IF / A
Tj=150C
Tj=25C
10
BYQ28
5
typ
max
0
0
0.5
1
1.5
VF / V
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Qs / nC
100
10
IF=5A
IF=2A
IF=1A
1.0
0.1
1.0
10
100
-dIF/dt (A/us)
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD
tp
D
=
tp
T
0.001
1us
10us
T
t
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BYQ28E
Fig.11. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
October 1998
4
Rev 1.300