Philips Semiconductors
Dual rectifier diodes
ultrafast
1000 trr / ns
IF=5 A
100
1A
10
Tj = 25 C
Tj = 100 C
1
1
10
100
dIF/dt (A/us)
Fig.5. Maximum trr at Tj = 25˚C and 100˚C; per diode
Irrm / A
10
IF= 5 A
1
IF=1A
0.1
Tj = 25 C
Tj = 100 C
0.01
1
10
100
-dIF/dt (A/us)
Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C; per
diode.
15 IF / A
Tj=150C
Tj=25C
10
BYQ28
max
5
typ
0
0
0.5
1
1.5
VF / V
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Product specification
BYT28 series
Qs / nC
1000
100
10
5A
IF = 2 A
1
1.0
10
100
-dIF/dt (A/us)
Fig.8. Maximum Qs at Tj = 25˚C; per diode.
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD
tp
D
=
tp
T
0.001
1us
10us
T
t
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BYQ28E
Fig.9. Transient thermal impedance per diode
Zth = f(tp)
October 1998
3
Rev 1.400