Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYV29-600
30 IF / A
Tj=150 C
Tj=25 C
20
typ
10
BYW29
max
0
0
0.5
1
1.5
2
VF / V
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
100 Cd / pF
10
1
1
10
VR / V 100
1000
Fig.8. Typical junction capacitance Cd at f = 1 MHz;
Tj = 25˚C
Qs / nC
1000
100
10
10A
2A
10A
IF=2A
25 C
150 C
1
1
-diF / dt
10
100
Fig.9. Maximum Qs at Tj = 25˚C
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD
tp
D
=
tp
T
0.001
1us
T
t
10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BYV29
Fig.10. Transient thermal impedance Zth j-mb= f(tp)
February 2000
4
Rev 1.100