BYV42EX View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BYV42EX Datasheet PDF : 7 Pages
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Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV42F, BYV42EX series
FEATURES
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
a1
a2
1
3
k2
QUICK REFERENCE DATA
VR = 150 V/ 200 V
VF ≤ 0.9 V
IO(AV) = 20 A
IRRM = 0.2 A
trr ≤ 28 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV42F series is supplied in the SOT186 package.
The BYV42EX series is supplied in the SOT186A package.
PINNING
SOT186
SOT186A
PIN
DESCRIPTION
case
case
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab isolated
12 3
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
IRRM
IRSM
Tstg
Tj
BYV42F / BYV42EX
Peak repetitive reverse voltage
-
Crest working reverse voltage
-
Continuous reverse voltage
Ths ≤ 125˚C
-
Average rectified output current square wave
-
(both diodes conducting)1
δ = 0.5; Ths ≤ 78 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
-
per diode
Ths ≤ 78 ˚C
Non-repetitive peak forward t = 10 ms
-
current per diode
t = 8.3 ms
-
sinusoidal; with reapplied
VRWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001
-
per diode
Non-repetitive peak reverse tp = 100 µs
-
current per diode
Storage temperature
-40
Operating junction temperature
-
MAX.
-150
150
150
150
-200
200
200
200
20
30
150
160
0.2
0.2
150
150
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
1 Neglecting switching and reverse current losses.
October 1998
1
Rev 1.300
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