BYV25G-600 View Datasheet(PDF) - NXP Semiconductors.
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Description
Manufacturer
BYV25G-600 Datasheet PDF : 11 Pages
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NXP Semiconductors
BYV25G-600
Ultrafast rectifier diode
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
VF
forward voltage
IR
reverse current
Dynamic characteristics
Qr
recovered charge
trr
reverse recovery time
VFR
forward recovery
voltage
IRM
peak reverse recovery
current
Conditions
IF = 5 A; see Figure 4
IF = 5 A; Tmb ≤ 150 °C; see Figure 4
VR = 600 V; Tj = 100 °C
VR = 600 V
IF = 2 A; VR ≥ 30 V; dIF/dt = 20 A/µs;
see Figure 5
IF = 1 A; VR ≥ 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; see Figure 5
IF = 10 A; dIF/dt = 10 A/µs; see Figure 6
IF = 10 A; VR ≤ 30 V; dIF/dt = 50 A/µs;
Tj = 100 °C; see Figure 5
Min Typ Max Unit
-
1.12 1.3 V
-
0.97 1.11 V
-
0.1 0.35 mA
-
2
50
µA
-
40
70
nC
-
50
60
ns
-
3.2 -
V
-
3
5.5 A
15
IF
(A)
10
5
003aac232
(1) (2) (3)
0
0
0.4
0.8
1.2
1.6
VF (V)
IF
dlF
dt
trr
Qr
IR
IRM
time
25 %
100 %
003aac562
Fig 4. Forward current as a function of forward
voltage
Fig 5. Reverse recovery definitions; ramp recovery
BYV25G-600_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 February 2010
© NXP B.V. 2010. All rights reserved.
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