BYV79EB-200 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BYV79EB-200 Datasheet PDF : 7 Pages
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Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV79EB series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
minimum footprint, FR4 board
MIN. TYP. MAX. UNIT
-
-
2 K/W
-
50
- K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VF
Forward voltage
IR
Reverse current
Qs
Reverse recovery charge
trr1
Reverse recovery time
trr2
Reverse recovery time
Vfr
Forward recovery voltage
CONDITIONS
IF = 14 A; Tj = 150˚C
IF = 14 A
IF = 50 A
VR = VRRM; Tj = 100 ˚C
VR = VRRM
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
IF = 1 A; dIF/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
-
TYP.
0.83
0.95
1.2
0.5
5
6
20
13
1
MAX.
0.90
1.05
1.4
1.3
50
15
30
UNIT
V
V
V
mA
µA
nC
ns
22 ns
-
V
July 1998
2
Rev 1.100
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