BYV79EB-200 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BYV79EB-200 Datasheet PDF : 7 Pages
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Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV79EB series
trr / ns
1000
100
10
IF=10A
IF=1A
1
1
10
100
dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C.
Irrm / A
10
1
0.1
IF=10A
IF=2A
0.01
1
10
100
-dIF/dt (A/us)
Fig.8. Maximum Irrm at Tj = 25 ˚C.
60 IF / A
Tj = 150 C
50
Tj = 25 C
40
30
20
typ
10
max
0
0
0.5
1.0
1.5
2
VF / V
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
1000 Qs / nC
100
10
IF=10A
5A
2A
1.0
1.0
10
100
-dIF/dt (A/us)
Fig.10. Maximum Qs at Tj = 25 ˚C.
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD
tp
D
=
tp
T
0.001
1us
T
t
10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BYV79E
Fig.11. Transient thermal impedance; Zth j-mb = f(tp).
July 1998
4
Rev 1.100
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