BYW54 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BYW54 Datasheet PDF : 7 Pages
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Philips Semiconductors
Controlled avalanche rectifiers
Product specification
BYW54 to BYW56
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
forward voltage
V(BR)R
IR
reverse avalanche
breakdown voltage
BYW54
BYW55
BYW56
reverse current
IF = 1 A; Tj = Tj max; see Fig.6
IF = 1 A; see Fig.6
IR = 0.1 mA
VR = VRRMmax; see Fig.7
VR = VRRMmax; Tj = 165 °C;
see Fig.7
trr
reverse recovery time
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.10
Cd
diode capacitance
VR = 0 V; f = 1 MHz; see Fig.8
MIN.
−
−
TYP.
−
−
MAX.
0.8
1.0
UNIT
V
V
650
900
1 100
−
−
−
−
−V
−
−V
−
−V
−
1 µA
−
150 µA
3
− µs
−
50
− pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
46
K/W
100
K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the “General Part of associated Handbook”.
1996 Oct 03
3
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