IRFF110 View Datasheet(PDF) - Intersil
Part Name
Description
Manufacturer
IRFF110 Datasheet PDF : 7 Pages
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IRFF110
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
TEST CONDITIONS
ISD Modified MOSFET Symbol
D
ISM
Showing the Integral
Reverse P-N Junction
Rectifier
G
MIN TYP MAX UNITS
-
-
3.5
A
-
-
14
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
S
TJ = 25oC, ISD = 3.5A, VGS = 0V (Figure 13)
TJ = 150oC, ISD = 3.5A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 3.5A, dISD/dt = 100A/µs
-
-
2.5
V
- 200 -
ns
-
1.0
-
µC
Forward Turn-On Time
tON Intrinsic Turn-On Time is Negligible. Turn-On
Speed is Substantially Controlled by LS + LD
-
-
-
-
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 5V, starting TJ = 25oC, L = 2.3mH, RG = 25Ω, peak IAS = 3.5A. See Figures 15, 16.
Typical Performance Curves Unless Otherwise Specified
1.2
5
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
4
3
2
1
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
10-5
PDM
SINGLE PULSE
10-4
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
t1
t2
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
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