IRFF110
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
500
ID = 250µA
1.15
400
1.05
300
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
0.95
0.85
0.75
-40
0
40
80
120
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
200
100
0
1
CISS
COSS
CRSS
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4.0
VDS > ID(ON) x rDS(ON)MAX
80µs PULSE TEST
3.2
2.4
-55oC
25oC
1.6
125oC
0.8
0
0
1.6
3.2
4.8
6.4
8.0
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
10
150oC
25oC
1.0
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 3.5A
15
10
VDS = 50V
VDS = 20V
VDS = 80V
5
0
0
2
4
6
8
10
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5