LAE4001R View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
LAE4001R Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCER
VCEO
VEBO
IC
Ptot
Tstg
Tj
Tsld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
soldering temperature
open emitter
RBE = 220 Ω
open base
open collector
Tcase ≤ 100 °C
t ≤ 10 s
Product specification
LAE4001R
MIN. MAX. UNIT
−
30 V
−
25 V
−
16 V
−
2
V
−
80 mA
−
480 mW
−65 +200 °C
−
200 °C
−
235 °C
102
handbook, halfpage
IC
(mA)
10
MGD988
(1) (2)
1
1
10
102
VCE (V)
Tcase ≤ 100 °C; RBE < 220 Ω.
(1) VCEO.
(2) VCER.
Fig.2 DC SOAR.
handboo6k,0h0alfpage
Ptot
(mW)
400
MGL069
200
0
0
50
100
150
200
Tcase (oC)
Fig.3 Power derating curve.
1997 Feb 18
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
3
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