DS2720BU/TR View Datasheet(PDF) - Dallas Semiconductor -> Maxim Integrated

Part Name

Description

Manufacturer

DS2720BU/TR

Efficient, Addressable Single-Cell Rechargeable Lithium Protection IC

Dallas Semiconductor -> Maxim Integrated 

EEPROM RELIABILITY

SPECIFICATION:

PARAMETER

SYMBOL

Copy to EEPROM Time

EEPROM Copy Endurance

EEPROM Data Retention

tEEC

NEEC

tEEDR

MIN

25,000

4

DS2720

(-20°C to +70°C, 2.5V £ VDD £ 5.5V)

TYP

MAX UNITS NOTES

1

5

ms

cycles

years

NOTES

1. All voltages are referenced to VSS.

2. Specified with no resistive load on CC, DC, or CP.

3. Contact the factory for different voltage trip points and delay periods.

4. Typical load capacitance on CC, DC is 1000pF CP (charge pump reservoir cap) = 0.1mF. DC load

total on CC, DC, CP > 10MW.

5. RTST = |VPLS - VDD| / I measured, with VPLS = 3.2V, VDD = 3.6V when test current, ITST, active for

RTST1 ; and VPLS = 4.0V, VDD = 2.5V when recovery charging for RTST2.

6. Maximum high-to-low fall time is 5ms.

7. Internal 10V clamp on DC pin limits DC output logic low when PLS > 10V

8. Short-circuit delay tested with VDD ramped from 3.1V to 1.9V in 5ms. Delay measured from VDD =

2.5V to DC pin fall to 7V from VOHCP.

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