DS_S1T8528X01 View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

DS_S1T8528X01

ENHANCED-1 CHIP CT0 RF IC

Samsung 

ENHANCED-1 CHIP CT0 RF IC

S1T8528

ELECTRICAL CHARACTERISTICS (Continued)

Characteristic

Second Mixer input

Impedance

Second Mixer output

Impedance

Carrier Detector Threshold

Low Battery Detector

Symbol

RI(2M)

Test Conditions

Fc = 10.7MHz

Min.

−

Ro(2M)

Fc = 455kHz

−

CDTH

LBD

MIX1 Single-Ended

Matching,

Default Threshold=1010

LBD0 ~ LBD3 = 0 ( Default )

Only LBD2 = 0

Only LBD1 = 0

Only LBD3 = 0

LBD0 ~ LBD3 = 1

−

− 0.15

−0.1

RSSI Slope

VRSSI

MIX1 Single-Ended

Matching

RSSI Output Voltage

Dynamic Range

RSSI

MIX1 Single-Ended

Matching

Carrier Detect

VOH

Output High Voltage

RFin = 1µVrms

Default Threshold = 1010

Carrier Detect

VOL

RFin = 10µVrms

Output Low Voltage

Default Threshold = 1010

COMPRESSOR

( Vcc = 3.6V, fc = 1kHz, Ta = 25°C, unless otherwise specified )

Standard Output Voltage

Vo(com)

Vinc = 63.2mVrms → 0dB

ALC disabled (pin 13)

Compressor Gain

Difference

∆GV1(COM)

∆GV2(COM)

Vinc = −20dB

Vinc = −40dB

Compressor Output

Distortion

THDCOM

Vinc = 63.2mVrms → 0dB

Mute Attenuation Ratio

ATTMUTE

Vinc = 0dB

Compressor Limiting Voltage VLIM(COM) Vinc = Variable

ALC

VALC

RALC = 150kΩ, Vinc = 10dB

Splatter filter

Vo(SF)

VINC = 63.2mVrms → 0 dB

Maximum Output Voltage VOMIC(MAX) RL = 10KΩ

EXPANDER

(Vcc = 3.6V, fc = 1kHz, Ta = 25°C, unless otherwise specified)

Standard Output Voltage

V O(EXP)

VinE = 63.2mVrms → 0dB

−

−

Vcc-0.4

−

269

−10

−1.5

−

60

1.05

310

269

−

309

Typ.

4

1.5

−95

3.45

3.3

3.0

2.2

2.1

30

60

−

−

316

0

0

0.5

80

1.35

390

316

2.8

356

Max. Unit

−

kΩ

−

kΩ

−

dBm

0.1

V

0.075

− mV/dB

−

dB

−

V

0.4

V

363 mVrms

1.0

dB

1.5

dB

1.0

%

−

dB

1.65 Vp-p

450 mVrms

363 mVrms

−

Vp-p

403 mVrms

9

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