ECH8653
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4A
ID=4A, VGS=8V
ID=4A, VGS=4V
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=10V, VGS=8V, ID=7.5A
IS=7.5A, VGS=0V
Switching Time Test Circuit
VIN
8V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=10V
ID=4A
RL=2.5Ω
D
VOUT
ECH8653
P.G
50Ω
S
Ratings
Unit
min
typ
max
20
V
1
μA
±10
μA
1.0
2.4
V
3.4
5.8
S
9
14
20 mΩ
11
18
25 mΩ
1280
pF
170
pF
105
pF
13
ns
48
ns
94
ns
36
ns
18.5
nC
2.7
nC
3.1
nC
0.82
1.2
V
Ordering Information
Device
ECH8653-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A0851-2/7