Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
EL817Y View Datasheet(PDF) - EVERLIGHT
Part Name
Description
Manufacturer
EL817Y
4PIN DIP PHOTOTRANSISTOR PHOOTOCOUPLER
EVERLIGHT
EL817Y Datasheet PDF : 14 Pages
1
2
3
4
5
6
7
8
9
10
Next
Last
DATASHEET
4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
EL817 series
Electro-Optical Characteristics (Ta=25
℃
unless specified otherwise)
Input
Parameter
Symbol
Min.
Forward Voltage
Reverse Current
Input capacitance
V
F
-
I
R
-
C
in
-
Output
Parameter
Symbol
Min
Collector-Emitter dark
I
CEO
-
current
Collector-Emitter
breakdown voltage
BV
CEO
35
Emitter-Collector
breakdown voltage
BV
ECO
6
Typ.
Max.
1.2
1.4
-
10
30
250
Typ.
Max.
-
100
-
-
-
-
Unit
Condition
V
I
F
= 20mA
µA
V
R
= 4V
pF
V = 0, f = 1kHz
Unit
Condition
nA
V
CE
= 20V, I
F
= 0mA
V
I
C
= 0.1mA
V
I
E
= 0.1mA
Transfer Characteristics
Parameter
Symbol
Min
Typ.
Max.
EL817
50
-
600
EL817A
80
-
160
Current
EL817B
130
Transfer EL817C CTR
200
ratio
EL817D
300
-
260
-
400
-
600
EL817X
100
-
200
EL817Y
150
Collector-Emitter
saturation voltage
V
CE(sat)
-
-
300
0.1
0.2
Isolation resistance
R
IO
5×10
10
-
-
Floating capacitance
C
IO
-
0.6
1.0
Cut-off frequency
fc
-
80
-
Rise time
Fall time
t
r
-
4
18
t
f
-
3
18
Unit
Condition
%
I
F
= 5mA ,V
CE
= 5V
V
I
F
= 20mA ,I
C
= 1mA
Ω
V
IO
= 500Vdc,
40~60% R.H.
pF
V
IO
= 0, f = 1MHz
kHz
V
CE
= 5V, I
C
= 2mA
R
L
= 100
Ω
, -3dB
µs
V
CE
= 2V, I
C
= 2mA,
µs
R
L
= 100
Ω
* Typical values at T
a
= 25°C
3
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000046 Rev.13
www.everlight.com
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]