Electrical Characteristics
VBIAS (VDD, VBS)=15.0V, and TA=25°C, unless otherwise specified. The VIN and IIN parameters are referenced to COM.
The VO and IO parameters are referenced to VS and COM and are applicable to the respective outputs HO and LO.
Symbol
Parameter
Condition
Min. Typ. Max. Unit
SUPPLY CURRENT SECTION
IQBS Quiescent VBS Supply Current
IQDD Quiescent VDD Supply Current
IPBS Operating VBS Supply Current
IPDD Operating VDD Supply Current
ILK
Offset Supply Leakage Current
POWER SUPPLY SECTION
VIN=0V or 5V
VIN=0V or 5V
fIN=20kHz, rms Value
fIN=20kHz, rms Value
VB=VS=600V
35 100 µA
80 200 µA
420 750 µA
420 750 µA
10 µA
VDDUV+ VDD and VBS Supply Under-Voltage
VBSUV+ Positive-going Threshold
VDDUV- VDD and VBS Supply Under-Voltage
VBSUV- Negative-going Threshold
VDDUVH VDD and VBS Supply Under-Voltage
VBSUVH Lockout Hysteresis
GATE DRIVER OUTPUT SECTION
VOH High-level Output Voltage, VBIAS-VO
VOL Low-level Output Voltage, VO
IO+
Output High Short-Circuit Pulse
Current(4)
8.2
7.2
IO=20mA
VO=0V, VIN=5V with PW<10µs 250
9.2 10.1 V
8.3 9.3 V
0.9
V
1.0 V
0.6 V
350
mA
IO-
Output Low Short-Circuit Pulse
Current(4)
VO=15V, VIN=0V with PW<10µs 500 650
mA
VS
Allowable Negative VS Pin Voltage for
IN Signal Propagation to HO
LOGIC INPUT SECTION
-9.8 -7.0 V
VIH Logic "1" Input Voltage
VIL
Logic "0" Input Voltage
IIN+ Logic "1" Input Bias Current
IIN-
Logic "0" Input Bias Current
RPD Input Pull-down Resistance
VIN=5V
VIN=0V
2.5
V
1.0 V
50 100 µA
2.0 µA
100
KΩ
Note:
4. This parameter is guaranteed by design.
Dynamic Electrical Characteristics
VBIAS (VDD, VBS)=15.0V, VS=COM, CL=1000pF, and TA = 25°C, unless otherwise specified.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
tON
Turn-on Propagation Delay Time
tOFF Turn-off Propagation Delay Time
tR
Turn-on Rising Time
tF
Turn-off Falling Time
DT
Dead Time
VS=0V
VS=0V
150 270 ns
140 250 ns
50 100 ns
30 80 ns
330 450 580 ns
© 2008 Fairchild Semiconductor Corporation
FAN73833 • Rev.1.0.0
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