FDW2520C(2008) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDW2520C Datasheet PDF : 8 Pages
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Typical Characteristics: Q1
5
ID = 6A
4
3
2
1
0
0
2
VDS = 5V
10V
15V
4
6
8
10
12
14
16
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
1ms
10ms
100ms
1s
10s
DC
VGS = 4.5V
0.1
SINGLE PULSE
RθJA = 208 oC/W
TA = 25oC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
2000
1750
1500
1250
1000
750
500
250
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
80
SINGLE PULSE
RθJA = 208 °C/W
60
TA = 25°C
40
20
0
0.0001 0.001 0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
FDW2520C Rev C1(W)
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