FDW2520C(2008) View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FDW2520C Datasheet PDF : 8 Pages
| |||
Typical Characteristics: Q2
5
ID = - 4.4A
4
3
2
1
0
0
3
VDS = - 5V
-10V
–15V
6
9
12
15
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
1ms
10ms
100ms
1s
10s
DC
VGS = 4.5V
0.1 SINGLE PULSE
RθJA = 208oC/W
TA = 25oC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
2100
1800
1500
1200
900
600
300
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5
10
15
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
RθJA = 208°C/W
TA = 25°C
0.1
1
10
t1, TIME (sec)
100
1000
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA =208 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDW2520C Rev C1(W)
Share Link: 