FES8AT View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
FES8AT Datasheet PDF : 5 Pages
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RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
10
Resistive or Inductive Load
8
Heatsink, Case Temperature, TC
6
Free Air, Ambient Temperature, TA
4
2
0
0
50
100
150
Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
150
TC = 100 °C
125
8.3 ms Single Half Sine-Wave
100
75
50
25
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
100
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 125 °C
10
TJ = 25 °C
FES(F,B)8AT thru FES(F,B)8JT
Vishay General Semiconductor
100
TJ = 125 °C
10
1
50 - 200 V
500 - 600 V
0.1
TJ = 100 °C
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
50 - 200 V
500 - 600 V
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
1
0.1
0.2
50 - 200 V
300 - 400 V
500 - 600 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Document Number: 88600 For technical questions within your region, please contact one of the following:
Revision: 07-Nov-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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