FMG1G75US60L View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FMG1G75US60L Datasheet PDF : 9 Pages
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16000
14000
12000
10000
8000
6000
4000
2000
0
Cies
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
Coes
Cres
1
10
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 300V, V = +/- 15V
CC
GE
I = 75A
C
TC = 250C
TC = 1250C
100
Toff
Tf
1
10
Gate
Resistance,
R
g
[Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Common Emitter
VCC = 300V, VGE = +/- 15V
R
G
=
3.3Ω
T = 250C
C
TC = 1250C
100
Ton
Tr
10
20
40
60
80
100
120
140
Collector Current, I [A]
C
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
1000
Common Emitter
VCC = 300V, VGE = +/- 15V
I = 75A
C
T = 250C
C
TC = 1250C
100
Ton
Tr
10
1
10
Gate Resistance, RG [Ω]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
10000
Common Emitter
VCC = 300V, VGE = +/- 15V
I = 75A
C
T = 250C
C
T = 1250C
C
Eon
Eoff
1000
1
10
Gate
Resistance,
R
G
[Ω]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
VCC = 300V, VGE = +/- 15V
R
G
=
3.3Ω
T = 250C
C
T = 1250C
C
100
Toff
Tf
Toff
Tf
20
40
60
80
100
120
140
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMG1G75US60L Rev. A
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