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Part Name
Description
FMMT634(1997) View Datasheet(PDF) - Diodes Incorporated.
Part Name
Description
Manufacturer
FMMT634
(Rev.:1997)
“SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR
Diodes Incorporated.
FMMT634 Datasheet PDF : 3 Pages
1
2
3
FMMT634
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
V
(BR)CBO
Breakdown Voltage
120 170
V
I
C
=100
µ
A
Collector-Emitter
V
(BR)CEO
Breakdown Voltage
100 115
V
I
C
=10mA*
Emitter-Base
V
(BR)EBO
Breakdown Voltage
12
16
V
I
E
=100
µ
A
Collector Cut-Off
Current
I
CBO
10
nA
V
CB
=80V
Emitter Cut-Off
I
EBO
Current
10
nA
V
EB
=7V
Collector Emitter
I
CES
Cut-Off Current
100 nA
V
CES
=80V
Collector-Emitter
V
CE(sat)
Saturation Voltage
Base-Emitter
V
BE(sat)
Saturation Voltage
0.67
0.72
0.75
0.82
0.68
0.85
0.75 V
0.80 V
0.85 V
0.93 V
—V
0.96
1.5 1.65 V
I
C
=100mA, I
B
=1mA *
I
C
=250mA, I
B
=1mA *
I
C
=500mA, I
B
=5mA *
I
C
=900mA, I
B
=5mA *
I
C
=900mA, I
B
=5mA *†
I
C
=1A, I
B
=5mA *
I
C
=1A, I
B
=5mA *
Base-Emitter
Turn-On Voltage
V
BE(on)
1.33 1.5 V
I
C
=1A, V
CE
=5V*
Static Forward
h
FE
Current Transfer
Ratio
Transition
f
T
Frequency
50K
20K 60K
15K 40K
5K 14K
600
24K
140
MHz
I
C
=10mA, V
CE
=5V *
I
C
=100mA, V
CE
=5V *
I
C
=1A, V
CE
=5V *
I
C
=2A, V
CE
=5V *
I
C
=5A, V
CE
=5V *
I
C
=1A, V
CE
=2V *
I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
9
20
pF
V
CB
=10V, f=1MHz
Turn-On Time
Turn-Off Time
t
(on)
t
(off)
290
ns
I
C
=500mA
V
CC
=20V
2.4
µ
s
I
B
=
±
1mA
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%.
† T
j
=150°C
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