FZT605 View Datasheet(PDF) - Diodes Incorporated.

Part Name

Description

Manufacturer

FZT605

120V NPN DARLINGTON TRANSISTOR IN SOT223

Diodes Incorporated. 

A Product Line of

Diodes Incorporated

FZT605

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Collector-Base Breakdown Voltage

BVCBO

140

—

Collector-Emitter Breakdown Voltage (Note 11)

BVCEO

120

—

Emitter-Base Breakdown Voltage

BVEBO

14

—

Collector-Base Cut-Off Current

-

ICBO

-

—

Collector-Emitter Cut-Off Current

Emitter Cut-Off Current

ICES

-

—

IEBO

-

—

DC Current Gain (Note 11)

2,000

—

5,000

hFE

2,000

—

—

500

—

Collector-Emitter Saturation Voltage (Note 11)

VCE(sat)

—

—

—

—

Base-Emitter Saturation Voltage (Note 11)

VBE(sat)

—

—

Base-Emitter Turn-On Voltage (Note 11)

VBE(on)

—

—

Input Capacitance

Cibo

—

90

Output Capacitance

Cobo

—

15

Current Gain-Bandwidth Product

fT

150

—

Turn-On Time

Turn-Off Time

ton

—

0.5

toff

—

1.6

Note:

11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.

Max

—

—

—

100

10

100

100

—

—

100,000

—

1

1.5

1.8

1.7

—

—

—

—

—

Unit

V

V

V

nA

µA

nA

nA

—

V

V

V

pF

pF

MHz

µs

µs

Test Condition

IC = 100µA

IC = 1mA

IE = 100µA

VCB = 120V

VCB = 120V, TA = +120°C

VCE = 120V

VEB = 8V

IC = 50mA, VCE = 5V

IC = 500mA, VCE = 5V

IC = 1A, VCE = 5V

IC = 2A, VCE = 5V

IC = 250mA, IB = 0.25mA

IC = 1A, IB = 1mA

IC = 1A, IB = 1mA

IC = 1A, VCE = 5V

VEB = 0.5V, f = 1MHz

VCB = 10V, f = 1MHz

VCE = 10V, IC = 100mA,

f=20MHz

VCC = 10V, IC = 500mA

IB1 = -IB2 = 0.5mA

FZT605

Document number: DS33147 Rev. 6 - 2

4 of 7

www.diodes.com

March 2015

© Diodes Incorporated

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