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H5N2001LD View Datasheet(PDF) - Renesas Electronics

Part Name
Description
Manufacturer
H5N2001LD
Renesas
Renesas Electronics 
H5N2001LD Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
H5N2001LD, H5N2001LS, H5N2001LM
Reverse Drain Current vs.
Souece to Drain Voltage
50
40
Gate to Source Cutoff Voltage vs.
Case Temperature
5
ID = 10 mA
4
30
20
10
5V
10 V
0
0 0.4
VGS = 0, –5 V
Pulse Test
0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
3
1 mA
2
0.1 mA
1
0
–25 0
VDS = 10 V
25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 1.67°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
10
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDD
= 100 V
Switching Time Waveform
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
Rev.6.00 Jul 14, 2006 page 5 of 7

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