Philips Semiconductors
General purpose diode
Product specification
BAX14
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
Cd
diode capacitance
trr
reverse recovery time
CONDITIONS
see Fig.3
IF = 1 mA
IF = 300 mA
see Fig.5
VR = 20 V
VR = 20 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω;
measured at IR = 3 mA; see Fig.7
MIN.
520
750
−
−
−
−
MAX. UNIT
600 mV
1000 mV
100 nA
100 µA
35 pF
50 ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point lead length 10 mm
thermal resistance from junction to ambient lead length 10 mm; note 1
Note
1. Device mounted on a printed circuit-board without metallization pad.
VALUE
240
375
UNIT
K/W
K/W
1996 Sep 17
3