HFA1100/883
Die Characteristics
DIE DIMENSIONS:
63 x 44 x 19 mils ± 1 mils
1600µm x 1130µm x 483µm ± 25.4µm
METALLIZATION:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8kÅ ± 0.4kÅ
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16kÅ ± 0.8kÅ
GLASSIVATION:
Type: Nitride
Thickness: 4kÅ ± 0.5kÅ
WORST CASE CURRENT DENSITY:
2.0 x 105 A/cm2 at 47.5mA
TRANSISTOR COUNT: 52
SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-)
Metallization Mask Layout
HFA1100/883
+IN
-IN
V-
VL
BAL
OUT
BAL
VH
V+
Spec Number 511104-883
178