HM5116400TS View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

HM5116400TS

4,194,304-word 4-bit Dynamic RAM

Hitachi -> Renesas Electronics 

HM5116400 Series, HM5117400 Series

Read-Modify-Write Cycle

HM5116400/HM5117400

-5

-6

-7

Parameter

Read-modify-write cycle time

to delay time

to delay time

Column address to delay time

hold time from

Symbol Min

tRWC

tRWD

tCWD

tAWD

tOEH

131

73

36

48

13

Max Min

— 155

— 85

— 40

— 55

— 15

Max Min

— 181

— 98

— 46

— 63

— 18

Max Unit

— ns

— ns

— ns

— ns

— ns

Notes

14

14

14

Refresh Cycle

HM5116400/HM5117400

-5

-6

-7

Parameter

Symbol Min Max Min Max Min

setup time (CBR refresh cycle) tCSR

hold time (CBR refresh cycle) tCHR

setup time (CBR refresh cycle) tWRP

hold time (CBR refresh cycle) tWRH

precharge to

hold time tRPC

5

—5

—5

7

— 10 — 10

0

—0

—0

7

— 10 — 10

5

—5

—5

Max Unit

— ns

— ns

— ns

— ns

— ns

Notes

Fast Page Mode Cycle

HM5116400/HM5117400

-5

-6

-7

Parameter

Symbol Min Max Min Max Min Max Unit

Fast page mode cycle time

tPC

Fast page mode

pulse width tRASP

Access time from

precharge tCPA

hold time from

precharge tCPRH

35 —

40 —

45 —

ns

— 100000 — 100000 — 100000 ns

— 30

— 35

— 40

ns

30 —

35 —

40 —

ns

Notes

16

9, 17, 20

13

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