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Part Name
Description
HSB276AYP View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
HSB276AYP
Silicon Schottky Barrier Diode for High Speed Switching
Hitachi -> Renesas Electronics
HSB276AYP Datasheet PDF : 5 Pages
1
2
3
4
5
Main Characteristic
10
−
1
10
−
2
10
−
3
10
−
4
Ta = 75
°
C
Ta = 25
°
C
10
−
5
0
0.2 0.4 0.6 0.8 1.0
Forward voltage V
F
(V)
Fig.1 Forward current Vs. Forward voltage
f = 1MHz
10
HSB276AYP
10
−
2
10
−
3
10
−
4
Ta = 75
°
C
10
−
5
Ta = 25
°
C
10
−
6
0
1.0
2.0 3.0 4.0 5.0
Reverse voltage V
R
(V)
Fig.2 Reverse current Vs. Reverse voltage
1.0
0.1
0.1
1.0
10
Reverse voltage V
R
(V)
Fig.3 Capacitance Vs. Reverse voltage
3
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