Q67100-Q973 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

Q67100-Q973

1M × 4-Bit Dynamic RAM

Siemens AG 

HYB 514400BJ-50/-60

1M × 4 DRAM

AC Characteristics (cont’d) 5, 6

TA = 0 to 70 °C, VCC = 5 V ± 10 %, tT = 5 ns

Parameter

Column address to RAS lead time

Read command setup time

Read command hold time

Read command hold time referenced to RAS

CAS to output in low-Z

Output buffer turn-off delay

Output buffer turn-off delay from OE

Data to CAS low delay

Data to OE low delay

CAS high to data delay

OE high to data delay

Symbol

Limit Values

Unit

-50

-60

min. max. min. max.

tRAL

25 –

30 –

ns

tRCS

0–

0–

ns

tRCH

0–

0–

ns

tRRH

0–

0–

ns

tCLZ

0–

0–

ns

tOFF

0 13 0 15 ns

tOEZ

0 13 0 15 ns

tDZC

0–

0–

ns

tDZO

0–

0–

ns

tCDD

13 –

15 –

ns

tODD

13 –

15 –

ns

Note

11

11

8

12

12

13

13

14

14

Write Cycle

Write command hold time

Write command pulse width

Write command setup time

Write command to RAS lead time

Write command to CAS lead time

Data setup time

Data hold time

tWCH

tWP

tWCS

tRWL

tCWL

tDS

tDH

8–

8–

0–

13 –

13 –

0–

10 –

10 –

10 –

0–

15 –

15 –

0–

10 –

ns

ns

ns 15

ns

ns

ns 16

ns 16

Read-Modify-Write Cycle

Read-write cycle time

RAS to WE delay time

CAS to WE delay time

Column address to WE delay time

OE command hold time

tRWC

tRWD

tCWD

tAWD

tOEH

131 –

68 –

31 –

43 –

13 –

150 –

80 –

35 –

50 –

15 –

ns

ns 15

ns 15

ns 15

ns

Fast Page Mode Cycle

Fast page mode cycle time

CAS precharge time

tPC

35 –

40 –

ns

tCP

10 –

10 –

ns

Semiconductor Group

7

1998-10-01

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