IRFH4253DPBF View Datasheet(PDF) - International Rectifier

Part Name

Description

Manufacturer

IRFH4253DPBF

HEXFET® Power MOSFET

International Rectifier 

IRFH4253DPbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

BVDSS

Drain-to-Source Breakdown Voltage

BVDSS/TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

VGS(th)/TJ Gate Threshold Voltage Coefficient

IDSS

Drain-to-Source Leakage Current

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

gfs

Forward Transconductance

Qg

Total Gate Charge

Qgs1

Pre-Vth Gate-to-Source Charge

Qgs2

Post-Vth Gate-to-Source Charge

Qgd

Gate-to-Drain Charge

Qgodr

Qsw

Qoss

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

Output Charge

RG

Gate Resistance

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

Q1/Q2

Q1/Q2

Q1/Q2

Q1/Q2

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

Q1

Q2

Min.

25

25

–––

–––

–––

–––

–––

–––

1.1

1.1

–––

–––

–––

–––

–––

–––

131

164

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

Typ. Max. Units

Conditions

–––

–––

22

22

2.50

0.90

3.70

1.15

1.6

1.6

-5.7

-8.9

–––

–––

–––

–––

–––

–––

10

––– V VGS = 0V, ID = 250µA

–––

VGS = 0V, ID = 1.0mA

––– mV/°C Reference to 25°C, ID = 1.0mA

–––

Reference to 25°C, ID = 10mA

3.20

VGS = 10V, ID = 30A 

1.10 m VGS = 10V, ID = 30A 

4.60

VGS = 4.5V, ID = 30A 

1.45

VGS = 4.5V, ID = 30A 

2.1 V Q1: VDS = VGS, ID = 35µA

2.1

Q2: VDS = VGS, ID = 100µA

––– mV/°C Q1: VDS = VGS, ID = 35µA

–––

Q2: VDS = VGS, ID = 100µA

1.0 µA VDS = 20V, VGS = 0V

250

VDS = 20V, VGS = 0V

100 nA VGS = 20V

-100

VGS = -20V

––– S VDS = 10V, ID = 30A

–––

VDS = 10V, ID = 30A

15

31 47

2.5 –––

Q1

4.9 –––

1.6 –––

5.4 –––

VDS = 13V

VGS = 4.5V, ID = 30A

nC

3.8 –––

Q2

12 –––

2.1 –––

8.7 –––

VDS = 13V

VGS = 4.5V, ID = 30A

5.4 –––

17.4 –––

10 ––– nC VDS = 16V, VGS = 0V

31 –––

2.4 ––– 

1.1 –––

10 –––

Q1

16 –––

VDS = 13V VGS = 4.5V

61 –––

ID = 30A, Rg = 1.8

98 ––– ns

13 –––

Q2

26 –––

15 –––

65 –––

VDS = 13V VGS = 4.5V

ID = 30A, Rg = 1.8

1314 –––

3756 –––

365 –––

1205 –––

VGS = 0V

pF VDS = 13V

ƒ = 1.0MHz

92 –––

286 –––

2 www.irf.com © 2013 International Rectifier

June 10, 2013

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