IRFR3911 View Datasheet(PDF) - Kersemi Electronic Co., Ltd.
Part Name
Description
Manufacturer
IRFR3911 Datasheet PDF : 10 Pages
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SMPS MOSFET
Applications
l High frequency DC-DC converters
VDSS
100V
PD - 94272
IRFR3911
IRFU3911
HEXFET® Power MOSFET
RDS(on) max
ID
0.115Ω
14A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3911
I-Pak
IRFU3911
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Max.
14
9.5
56
56
0.37
± 20
7.1
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
–––
–––
Max.
2.7
50
110
Units
°C/W
www.kersemi.com
1
01/22/02
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