IS41C16105-50TE View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

Manufacturer

IS41C16105-50TE

1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

Integrated Silicon Solution 

IS41C16105

IS41LV16105

ISSI ®

TRUTH TABLE

Function

Standby

Read: Word

Read: Lower Byte

RAS LCAS UCAS WE

H

H

H

X

L

L

L

H

L

L

H

H

OE Address tR/tC

X

X

L

ROW/COL

L

ROW/COL

Read: Upper Byte

L

H

L

H

L

ROW/COL

Write: Word (Early Write)

Write: Lower Byte (Early Write)

L

L

L

L

X

ROW/COL

L

L

H

L

X

ROW/COL

Write: Upper Byte (Early Write)

L

H

L

L

X

ROW/COL

Read-Write(1,2)

L

L

L H→L L→H ROW/COL

Hidden Refresh

Read(2)

Write(1,3)

L→H→L L

L

H

L

ROW/COL

L→H→L L

L

L

X

ROW/COL

RAS-Only Refresh

L

H

H

X

X

ROW/NA

CBR Refresh(4)

H→L L

L

X

X

X

Notes:

1. These WRITE cycles may also be BYTE WRITE cycles (either LCAS or UCAS active).

2. These READ cycles may also be BYTE READ cycles (either LCAS or UCAS active).

3. EARLY WRITE only.

4. At least one of the two CAS signals must be active (LCAS or UCAS).

I/O

High-Z

DOUT

Lower Byte, DOUT

Upper Byte, High-Z

Lower Byte, High-Z

Upper Byte, DOUT

DIN

Lower Byte, DIN

Upper Byte, High-Z

Lower Byte, High-Z

Upper Byte, DIN

DOUT, DIN

DOUT

DOUT

High-Z

High-Z

Integrated Silicon Solution, Inc. — 1-800-379-4774

3

Rev. A

03/03/00

Share Link: