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IW4027B View Datasheet(PDF) - Integral Corp.

Part Name
Description
Manufacturer
IW4027B
INTE-ElectronicGRAL
Integral Corp. 
IW4027B Datasheet PDF : 6 Pages
1 2 3 4 5 6
IW4027B
MAXIMUM RATINGS*
Symbol
VCC
VIN
IIN
PD
Ptot
Tstg
TL
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Input Current, per Pin
Power Dissipation in Still Air, Plastic DIP, SOIC
Package
Power Dissipation per Output Transistor
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
Value
Unit
-0.5 to +20
V
-0.5 to VCC +0.5
V
±10
mA
500**
mW
100
mW
-65 to +150
°C
260
°C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
**Derating: - Plastic DIP from -55 to +100°C
- SOIC Package from -55 to +65°C
- Plastic DIP: - 10 mW/°C from +100 to +125°C
- SOIC Package: : - 7 mW/°C from +65 to +125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
DC Supply Voltage (Referenced to GND)
VIN
DC Input Voltage (Referenced to GND)
TA
Operating Temperature, All Package Types
Min
Max
Unit
3.0
18
V
0
VCC
V
-55
+125
°C
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages
to this high-impedance circuit. For proper operation VIN
GNDVIN VCC.
should be constrained to the range
Unused inputs mu st always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused
outputs must be left open.
INTEGRAL
2

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