IXFH6N120 View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
Manufacturer
IXFH6N120 Datasheet PDF : 4 Pages
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IXFH 6N120
Symbol
gfs
Ciss
Coss
C
rss
td(on)
tr
td(off)
t
f
Qg(on)
Qgs
Qgd
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
3
5
S
1950
pF
175
pF
60
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 4.7 Ω (External)
28
ns
33
ns
42
ns
18
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
(TO-247)
56
nC
13
nC
25
nC
0.42 K/W
0.21
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
6A
ISM
Repetitive
24 A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5 V
trr
IF = 6 A, di/dt ≤ 100 A/µs
QRM
IRM
300 ns
0.6
uC
3.0
A
TO-247 AD Outline
123
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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