IXFH20N80P View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
Manufacturer
IXFH20N80P Datasheet PDF : 5 Pages
| |||
PolarHVTM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH 20N80P
IXFT 20N80P
IXFV 20N80P
IXFV 20N80PS
VDSS =
ID25 =
≤ RDS(on)
trr
≤
800 V
20 A
520 m Ω
250 ns
Symbol
VDSS
VDGR
VGSS
V
GSM
ID25
IDM
IAR
EAR
EAS
dv/dt
P
D
TJ
TJM
T
stg
TL
TSOLD
M
d
FC
Weight
Test Conditions
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤150° C, RG = 4 Ω
T
C
= 25° C
Maximum lead temperature for soldering
Plastic case for 10 s
Mounting torque (TO-247)
Mounting force (PLUS220)
TO-247
TO-268
PLUS220 types
Maximum Ratings
800
V
800
V
TO-247 (IXFH)
± 30
± 40
20
50
10
30
1.0
V
V
TO-268 (IXFT)
A
A
A
G
mJ
S
J
10
V/ns PLUS220 (IXFV)
(TAB)
D (TAB)
500
W
-55 ... +150
150
-55 ... +150
300
260
°C
G
°C
DS
°C
D (TAB)
PLUS220 SMD(IXFV..S)
°C
°C
1.13/10 Nm/lb.in.
1..65 / 2.5..15
6
5.5
4
N/lb
G
g
S
D (TAB)
g
g
G = Gate
D = Drain
S = Source Tab = Drain
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
800
V
VGS(th)
VDS = VGS, ID = 4 mA
3.0
5.0 V
I
GSS
V
GS
=
±
30
V,
DC
V
DS
=
0
± 200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
25 µA
1000 µA
RDS(on)
VGS = 10 V, ID = 10 A
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
520 m Ω
Features
l International standard packages
l Fast recovery diode
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
DS99511E(03/06)
© 2006 IXYS All rights reserved
Share Link: 