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K4D263238G-GC View Datasheet(PDF) - Samsung

Part Name
Description
Manufacturer
K4D263238G-GC
Samsung
Samsung 
K4D263238G-GC Datasheet PDF : 20 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
K4D263238G-GC
128M GDDR SDRAM
AC OPERATING TEST CONDITIONS (TA= 0 to 65°C)
Parameter
Value
Unit
Input reference voltage for CK(for single ended)
0.50*VDDQ
V
CK and CK signal maximum peak swing
1.5
V
CK signal minimum slew rate
1.0
V/ns
Input Levels(VIH/VIL)
VREF+0.4/VREF-0.4
V
Input timing measurement reference level
VREF
V
Output timing measurement reference level
Vtt
V
Output load condition
See Fig.1
Note 1 : In case of differential clocks(CK and CK), input reference voltage for clock is a CK and CK ’s crossing point
Accordingly, clock duty should be measured at a CK and CK ’s crossing point.
Note
1
Vtt=0.5*VDDQ
Output
RT=50
Z0=50
CLOAD=30pF
VREF
=0.5*VDDQ
(Fig. 1) Output Load Circuit
CAPACITANCE (TA= 25°C, f=1MHz)
Parameter
Input capacitance( CK, CK )
Input capacitance(A0~A11, BA0~BA1)
Input capacitance( CKE, CS, RAS,CAS, WE )
Data & DQS input/output capacitance(DQ0~DQ31)
Input capacitance(DM0 ~ DM3)
Symbol
CIN1
CIN2
CIN3
COUT
CIN4
Min
1.0
1.0
1.0
1.0
1.0
Max
5.0
4.0
4.0
6.5
6.5
Unit
pF
pF
pF
pF
pF
DECOUPLING CAPACITANCE GUIDE LINE
Recommended decoupling capacitance added to power line at board.
Parameter
Decoupling Capacitance between VDD and VSS
Decoupling Capacitance between VDDQ and VSSQ
Symbol
CDC1
CDC2
Note : 1. VDD and VDDQ pins are separated each other.
All VDD pins are connected in chip. All VDDQ pins are connected in chip.
2. VSS and VSSQ pins are separated each other
All VSS pins are connected in chip. All VSSQ pins are connected in chip.
- 15 -
Value
Unit
0.1 + 0.01
uF
0.1 + 0.01
uF
Rev 1.8 (March. 2005)

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