K4B1G0446G-BCH9 View Datasheet(PDF) - Samsung

Part Name

Description

Manufacturer

K4B1G0446G-BCH9

1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant)

Samsung 

K4B1G0446G

K4B1G0846G

datasheet

Rev. 1.01

DDR3 SDRAM

NOTE :Clock and Strobe are drawn on a different time scale.

tIS

tIH

CK

CK

DQS

DQS

VDDQ

tDS tDH

VIH(AC) min

VIH(DC) min

dc to VREF

region

VREF(DC)

dc to VREF

region

VIL(DC) max

tangent

line

VIL(AC) max

tIS tIH

tDS tDH

nominal

line

tangent

line

nominal

line

VSS

∆ TR

∆ TF

Hold Slew Rate

Rising Signal

=

tangent line [ VREF(DC) - VIL(DC)max ]

∆ TR

Hold Slew Rate

Falling Signal

=

tangent line [ VIH(DC)min - VREF(DC) ]

∆ TF

Figure 28. Illustration of tangent line for hold time tDH (for DQ with respect to strobe) and tIH

(for ADD/CMD with respect to clock)

- 64 -

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