KC847S View Datasheet(PDF) - KEXIN Industrial

Part Name

Description

Manufacturer

KC847S

NPN Multi-Chip General Purpose Amplifier

KEXIN Industrial 

SMD Type

Transistors

NPN Multi-Chip General Purpose Amplifier

KC847S(BC847S)

Features

High current gain

Low collector-emitter saturation voltage

SOT-363

1.3+0.1

-0.1

0.65

Unit: mm

0.3+0.1

-0.1

2.1+0.1

-0.1

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Total Device Dissipation

Derate above 25

Thermal Resistance, Junction to Ambient

Operating and Storage Junction Temperature Range

Symbol

VCBO

VCEO

VEBO

IC

PD

R JA

TJ, Tstg

Rating

50

45

6.0

100

300

2.4

415

-55 to +150

Unit

V

V

V

mA

mW

mW/

/W

0.1+0.05

-0.02

1 E1

2 B1

3 C2

4 E2

5 B2

6 C1

Electrical Characteristics Ta = 25

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Cutoff Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter ON Voltage

Output Capacitance

Transistion frequency

Symbol

Testconditons

VCBO IC = 10 A, IE = 0

VCEO IC = 10 mA, IB = 0

VEBO IE = 10 A, IC = 0

ICBO

VCB = 30 V, IE = 0

VCB = 30 V, IE = 0, TA = 150

hFE IC = 2.0 mA, VCE = 5.0 V

IC = 10 mA, IB = 0.5 mA

VCE(sat)

IC = 100 mA, IB = 5.0 mA

IC = 2.0 mA, VCE = 5.0 V

VBE(on)

IC = 10 mA, VCE = 5.0 V

Cob VCB = 10 V, f = 1.0 MHz

fT IC = 20 mA, VCE = 5.0,f = 100 mHz

Min Typ Max Unit

50

V

45

V

6.0

V

15 nA

5.0

A

110

630

0.25 V

0.65 V

0.58

0.7 V

0.77 V

2.0

pF

200

MHz

Marking

Marking

1C

www.kexin.com.cn 1

Share Link: