KSA614 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

KSA614

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

-2.0

IB = -10mA

-1.8

IB = -9mA

-1.6

IB = -8mA

-1.4

IB = -7mA

IB = -6mA

-1.2

IB = -5mA

-1.0

IB = -4mA

-0.8

IB = -3mA

-0.6

IB = -2mA

-0.4

-0.2

IB = -1mA

-0

-2

-4

-6

-8 -10 -12 -14 -16 -18 -20

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

-10

Ic = 10 IB

-1

VBE(sat)

-0.1

VCE(sat)

-0.01

-0.1

-1

IC[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

-10

1.Tc=25oC

2.*Single Pulse

*1ms

Thermal limitation

Thermal limitation

S/B limitation

DC

-1

S/B limitation

-0.1

-1

-10

-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area

©2000 Fairchild Semiconductor International

1000

VCE = -5V

100

10

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 2. DC current Gain

1000

f = 1MHz

IE=0

100

10

-1

-10

-100

VCB[V], COLLECTOR BASE VOLTAGE

Figure 4. Collector Output Capacitance

40

35

30

25

20

15

10

5

0

25

50

75

100

125

150

175

TC[oC], CASE TEMPERATURE

Figure 6. Power Derating

Rev. A, February 2000

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