KSB1097RTU View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

KSB1097RTU

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSB1097

Low Frequency Power Amplifier

• Low Speed Switchng Industrial Use

• Complement to KSD1588

1

TO-220F

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current (DC)

ICP

*Collector Current (Pulse)

IB

Base Current

PC

Collector Dissipation (Ta=25°C)

PC

Collector Dissipation (TC=25°C)

TJ

Junction Temperature

TSTG

Storage Temperature

* PW≤300µs, Duty Cycle≤10%

Electrical Characteristics TC=25°C unless otherwise noted

Symbol

Parameter

Test Condition

ICBO

Collector Cut-off Current

IEBO

Emitter Cut-off Current

hFE1

hFE2

* DC Current Gain

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(sat)

* Base-Emitter Saturation Voltage

* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed

VCB = - 60V, IE = 0

VEB = - 5V, IC = 0

VCE = - 1V, IC = - 3A

VCE = - 1V, IC = - 5A

IC = - 5A, IB = - 0.5A

IC = - 5A, IB = - 0.5A

hFE Classification

Classification

hFE1

R

40 ~ 80

O

60 ~ 120

Value

- 80

- 60

-7

-7

- 15

- 3.5

2

30

150

- 55 ~ 150

Units

V

V

V

A

A

A

W

W

°C

°C

Min.

40

20

Max.

- 10

- 10

200

Units

µA

µA

- 0.5

V

- 1.5

V

Y

100 ~ 200

©2000 Fairchild Semiconductor International

Rev. A, February 2000

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