KSB1097RTU View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

KSB1097RTU

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

-1.0

-0.9

-0.8

-0.7

-0.6

-0.5

-0.4

-0.3

-0.2

-0.1

-0.0

-0

IB = -20mA

IB = -18mA

IB = -16mA

IB = -14mA

IB = -12mA

IB = -10mA

IB = -8mA

IB = -6mA

IB = -4mA

IB = -2mA

-5 -10 -15 -20 -25 -30 -35 -40 -45 -50

V [V], COLLECTOR-EMITTER VOLTAGE

CE

Figure 1. Static Characteristics

-10

-1

VBE(sat)

I =10I

C

B

-0.1

VCE(sat)

-0.01

-1E-3

-0.01

-0.1

-1

-10

I [A], COLLECTOR CURRENT

C

Figure 3. Saturation Voltage

160

140

120

100

80

60

40

20

0

0

s/b LIMITED

DISSIPATION LIMITED

25

50

75

100

125

150

175

200

Tc [OC], CASE TEMPERATURE

Figure 5. Power Derating

©2000 Fairchild Semiconductor International

1000

100

VCE = -1V

10

1

-1E-3

-0.01

-0.1

-1

-10

IC [A], COLLECTOR CURRENT

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

40

35

30

25

20

15

10

5

0

0

25

50

75

100

125

150

175

200

Tc [oC], CASE TEMPERATURE

Figure 4. Power Derating

-100

50uS

-10

100uS

300uS

100mS

1mS

-1

10mS

-0.1

-0.01

-1

-10

-100

-1000

V [V], COLLECTOR-EMITTER VOLTAGE

CE

Figure 6. Safe Operating Area

Rev. A, February 2000

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