Typical Characteristics
1000
100
10
VCE = 10V
10000
1000
100
IC = 10IB
VBE(sat)
VCE(sat)
1
0.1
1
10
100
1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
10
0.1
1
10
100
1000
IC[mA], COLLECTOR CURRENT
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10k
VCE = 10V
f = 100MHz
1k
100
10
1
10
100
IC[mA], COLLECTOR CURRENT
Figure 3. Current Gain Bandwidth Product
40
OSCInj = 150mVrms
30
fsig = 60MHz,
fosc = 104MHz
20
fsig = 213MHz,
fosc = 275MHz
10
0
0
2
4
6
8
10
12
14
16
IC[mA], COLLECTOR CURRENT
Figure 4. Conversion Gain versus Collector Current
40
IC = 8mADC
30
fsig = 60MHz,
fosc = 104MHz
20
fsig = 213MHz,
fosc = 275MHz
10
0
0
100
200
300
400
Vi[mV], OSCILLATION INJECTION
Figure 5. Conversion Gain versus Injection Level
©2001 Fairchild Semiconductor Corporation
50
213MHz
60MHz
40
gie
30
20
bie
gie
10
bie
0
0
2
4
6
8
10 12 14 16 18 20
IC[mA], COLLECTOR CURRENT
Figure 6. Input Admittance
Rev. A1, June 2001