DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

L6564D View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
L6564D
ST-Microelectronics
STMicroelectronics 
L6564D Datasheet PDF : 34 Pages
First Prev 11 12 13 14 15 16 17 18 19 20 Next Last
L6564
Table 4. Electrical characteristics (continued)
Symbol
Parameter
Test condition
Voltage feedforward
VVFF Linear operation range
ΔV
Dropout VMULTpk-VVFF
ΔVVFF
ΔVVFF
Line drop detection thresh.
Line drop detection thresh.
RDISCH Internal discharge resistor
Vcc < VccOn
Vcc > or = to VccOn
Below peak value
Below peak value Tj =25°C
Tj = 25 °C
VDIS
VEN
Disable threshold
Enable threshold
Zero current detector
(2) voltage falling
(2) voltage rising
VZCDH
VZCDL
VZCDA
Upper clamp voltage
Lower clamp voltage
Arming voltage
(positive-going edge)
Triggering voltage
VZCDT (negative-going edge)
IZCDb
IZCDsrc
IZCDsnk
Input bias current
Source current capability
Sink current capability
Gate driver
IZCD = 2.5mA
IZCD = - 2.5mA
VZCD = 1 to 4.5V
VOL Output low voltage
Isink = 100mA
VOH Output high voltage
Isource = 5mA
Isrcpk Peak source current
Isnkpk Peak sink current
tf
Voltage fall time
tr
Voltage rise time
VOclamp Output clamp voltage
Isource = 5mA; Vcc = 20V
UVLO saturation
Vcc= 0 to VCCon, Isink= 2mA
1.
2.
3.
( ) Parameters tracking each other
The multiplier output is given by:
Parameters tracking each other
Vcs
= VCS_Ofst
+
KM
VMULT VCOMP 2.5
VV2FF
Electrical characteristics
Min. Typ. Max. Unit
1
3V
800
mV
20
40 70 100 mV
50 70 90 mV
7.5 10 12.5
kΩ
5
20
0.745 0.8 0.855 V
0.845 0.88 0.915 V
5.0 5.7
V
-0.3 0 0.3 V
1.1 1.4 1.9 V
0.5 0.7 0.9 V
-2.5 -4
2.5 5
1 µA
mA
mA
0.6 1.2 V
9.8 10.3
V
-0.6
A
0.8
A
30 60 ns
45 110 ns
10 12 15 V
1.1 V
Doc ID 16202 Rev 1
11/34

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]