Thermal Resistance
Symbol
Parameter
RΘJA Thermal Resistance Junction-to-Ambient
RΘJC Thermal Resistance Junction-to-Case
DPAK
Ratings
90
1.8
Electrical Specifications
(TA = +25°C, unless otherwise noted.)
The φ denotes a specification which apply over the full operating temperature range.
Symbol
Parameter
Conditions
Min.
Static
BVDSX Breakdown Voltage
ID = 0.5 mA
24
Drain to Source
VGS= -4 V
BVGDO Breakdown Voltage
IG = -50µA
Gate to Drain
BVGSO
Breakdown Voltage
Gate to Source
IG = -50µA
RDS(ON)
Drain to Source On
Resistance2
IG = 40 mA, ID=10A
IG = 10 mA, ID=10A
IG = 5 mA, ID=10A
VGS(TH) Gate Threshold Voltage
VDS=0.1 V, ID=250µA
TCVGSTH Temperature Coefficient of
Gate Threshold Voltage
VDS=0.1 V, ID=250µA
Dynamic
QGsync
QG
QGD
QGS
QSW
RG
Total Gate Charge Sync JFET
Total Gate Charge
Gate to Drain Charge
Gate to Source Charge
Switching Charge
Gate Resistance
∆VDrive =5V,VDS=0.1V (Fig. 2)
∆VDrive =5V, ID=10A,VDS=15V
VDS=13.5V to VDS=1.5V
VGS =-4.5V to VDS=13.5V
VGS =-2V to VDS=1.5V
TD(ON)
TR
TD(OFF)
TF
CISS
COSS
CGS
CGD
CDS
Turn-on Delay Time
Rise Time
Turn-off Delay
Fall Time
Input Capacitance
Output Capacitance
Gate-Source Capacitance
Gate-Drain Capacitance
Drain-Source Capacitance
VDD=15V, ID=10A
VDrive = 5 V
Resistive Load
VDS=10V, VGS= -5 V, 1MHz.
(see Fig. 4)
Typ.
28
-32
-14
4.6
4.8
4.9
-1
-2.6
9.8
12.4
8.1
4.3
9.1
0.7
5.5
12.6
10.3
6.6
1147
467
784
363
104
PN Diode
IR
Reverse Leakage
VR=20V, Vgs = -4V
VF
Forward Voltage
IF = 1 A
VF
Forward Voltage
VF
Forward Voltage
IF = 10 A
IF = 20 A
Qrr
Reverse Recovery Charge
Is = 10 A di/dt = 100A/us,
Trr
Reverse Recovery Time
Is = 10 A di/dt = 100A/us,
Notes:
1. Current is limited by bondwire; with an Rthjc = 1.8 oC/W the chip is able to carry 80A.
2. Pulse width <= 500µs, duty cycle < = 2%
812
932
1010
7
13.3
Units
°C/W
°C/W
Max. Units
V
-28
V
-12
V
6.5
mΩ
7.0
mΩ
V
mV/oC
nC
nC
nC
nC
nC
Ω
ns
pF
0.3
mA
mV
mV
mV
nC
ns
2
LD1014D
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
Product Specification