M68AW512DZB View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M68AW512DZB

8 Mbit (512K x16) 3.0V Asynchronous SRAM

STMicroelectronics 

M68AW512D

Table 5. Capacitance

Symbol

Parameter(1,2)

CIN Input Capacitance on all pins (except DQ)

COUT Output Capacitance

Note: 1. Sampled only, not 100% tested.

2. At TA = 25°C, f = 1 MHz, VCC = 3.0V.

Test Condition Min

VIN = 0V

VOUT = 0V

Max Unit

8

pF

10

pF

Table 6. DC Characteristics

Symbol

Parameter

Test Condition

-L

Min Max

ICC1

(1,2)

Operating Supply Current

VCC = 3.6V, f = 1/tAVAV,

IOUT = 0mA

70ns

55ns

25

30

ICC2(3) Operating Supply Current

VCC = 3.6V, f = 1MHz,

IOUT = 0mA

4

ISB

Standby Supply Current

CMOS

VCC = 3.6V, f = 0,

E1 ≥ VCC –0.2V or E2 ≤0.2V or

LB=UB ≥ VCC –0.2V

30

ILI Input Leakage Current

0V ≤VIN ≤VCC

–1

1

ILO Output Leakage Current

0V ≤VOUT ≤VCC (4)

–1

1

VIH Input High Voltage

2.2

VCC +

0.3

VIL Input Low Voltage

–0.3

0.6

VOH Output High Voltage

IOH = –1.0mA

2.4

VOL Output Low Voltage

IOL = 2.1mA

0.4

Note: 1. Average AC current, cycling at tAVAV minimum.

2. E1 = VIL AND E2 = VIH, LB OR/AND UB = VIL, VIN = VIL OR VIH.

3. E1 ≤0.2V AND E2 ≥ VCC –0.2V, LB OR/AND UB ≤0.2V, VIN ≤0.2V OR VIN ≥ VCC –0.2V.

4. Output disabled.

-N

Unit

Min Max

20 mA

20 mA

4

mA

30 µA

–1

1

µA

–1

1

µA

2.2

VCC +

0.3

V

–0.3

0.6

V

2.4

V

0.4

V

11/22

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