MAC4M, MAC4N
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
• Blocking Voltage to 800 Volts
• On-State Current Rating of 4.0 Amperes RMS at 100°C
• Uniform Gate Trigger Currents in Three Modes
• High Immunity to dv/dt — 500 V/µs minimum at 125°C
• Minimizes Snubber Networks for Protection
• High Surge Current Capability – 40 Amperes
• Industry Standard TO-220AB Package
• High Commutating di/dt — 6.0 A/ms minimum at 125°C
• Operational in Three Quadrants: Q1, Q2, and Q3
• Device Marking: Logo, Device Type, e.g., MAC4M, Date Code
http://onsemi.com
TRIACS
4 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
VDRM,
VRRM
MAC4M
600
MAC4N
800
Unit
Volts
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz,
TC = 100°C)
IT(RMS)
4.0
Amps
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = 125°C)
Circuit Fusing Consideration
(t = 8.33 ms)
ITSM
I2t
40
Amps
6.6
A2sec
Peak Gate Power
(Pulse Width ≤ 1.0 µs, TC = 100°C)
Average Gate Power
(t = 8.3 ms, TC = 100°C)
Operating Junction Temperature Range
PGM
PG(AV)
TJ
0.5
0.1
– 40 to
+125
Watt
Watt
°C
Storage Temperature Range
Tstg
– 40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
4
1
2
3
TO–220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
MAC4M
TO220AB
50 Units/Rail
MAC4N
TO220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 1999
1
February, 2000 – Rev. 1
Publication Order Number:
MAC4M/D