76113SK8 View Datasheet(PDF) - Intersil

Part Name

Description

Manufacturer

76113SK8

6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Intersil 

HUF76113SK8

Electrical Specifications TA = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time

Turn-On Delay Time

Rise Time

tON

VDD = 15V, ID ≅ 6.5A, RL = 2.31Ω,

-

td(ON)

VGS = 10V, RGS = 16Ω

(Figure 16)

-

tr

-

Turn-Off Delay Time

td(OFF)

-

Fall Time

tf

-

Turn-Off Time

tOFF

-

GATE CHARGE SPECIFICATIONS

Total Gate Charge

Gate Charge at 5V

Threshold Gate Charge

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

CAPACITANCE SPECIFICATIONS

Qg(TOT) VGS = 0V to 10V VDD = 15V, ID ≅ 2.0A,

-

Qg(5)

VGS = 0V to 5V

RL = 7.5Ω

Ig(REF) = 1.0mA

-

Qg(TH) VGS = 0V to 1V (Figures 14)

-

Qgs

-

Qgd

-

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

VDS = 25V, VGS = 0V, f = 1MHz

-

(Figure 13)

COSS

-

CRSS

-

TYP

MAX UNITS

-

59

ns

6.5

-

ns

33

-

ns

45

-

ns

40

-

ns

-

126

ns

17.5

21

nC

10

12

nC

0.65

0.78

nC

1.10

-

nC

5.40

-

nC

585

-

pF

327

-

pF

73

-

pF

Source to Drain Diode Specifications

PARAMETER

Source to Drain Diode Voltage

Reverse Recovery Time

Reverse Recovered Charge

SYMBOL

TEST CONDITIONS

VSD

trr

QRR

ISD =6.5A

ISD = 2.0A

ISD = 2.0A, dISD/dt = 100A/µs

ISD = 2.0A, dISD/dt = 100A/µs

MIN

TYP

MAX UNITS

-

-

1.25

V

1.10

V

-

-

47

ns

-

-

52

nC

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

0

0

25

50

75

100

125

150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

3

8

VGS = 10V, RθJA = 50oC/W

6

4

VGS = 4.5V, RθJA = 177oC/W

2

0

25

50

75

100

125

150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

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