MJF47 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
MJF47 Datasheet PDF : 6 Pages
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MJF47
High Voltage Power
Transistor
Isolated Package Applications
Designed for line operated audio output amplifiers, switching power
supply drivers and other switching applications, where the mounting
surface of the device is required to be electrically isolated from the
heatsink or chassis.
Features
• Electrically Similar to the Popular TIP47
• 250 VCEO(sus)
• 1 A Rated Collector Current
• No Isolating Washers Required
• Reduced System Cost
• UL Recognized, File #E69369, to 3500 VRMS Isolation
• Pb−Free Package is Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
Symbol Value Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage
VCEO
250
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage
VCB
350
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage
VEB
5
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RMS Isolation Voltage (Note 1)
VISOL
V
Test No. 1 Per Figure 10
4500
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Test No. 2 Per Figure 11
3500
Test No. 3 Per Figure 12
1500
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (for 1 sec, R.H. < 30%, TA = 25_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current − Continuous
− Peak
IC
1
Adc
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current − Continuous
IB
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation (Note 2) @ TC = 25_C
PD
Derate above 25_C
0.6
Adc
40
W
0.31
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TA = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
PD
2.0
W
0.016 W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
TJ, Tstg –65 to +150 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Case (Note 2) RqJC
4.4
_C/W
Lead Temperature for Soldering Purposes
TL
260
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum ratings are those values beyond which device damage can occur.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Proper strike and creepage distance must be provided.
2. Measurement made with thermocouple contacting the bottom insulated
surface (in a location beneath the die), the devices mounted on a heatsink with
thermal grease and a mounting torque of ≥ 6 in. lbs.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
NPN SILICON
POWER TRANSISTOR
1 AMPERE
250 VOLTS, 28 WATTS
1
2
3
TO−220 FULLPACK
CASE 221D
STYLE 2
MARKING DIAGRAM
MJF47G
AYWW
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
MJF47
MJF47G
Package
TO−220 FULLPACK
TO−220 FULLPACK
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 5
Publication Order Number:
MJF47/D
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