MPSA12RLRP View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

MPSA12RLRP

Darlington Transistors

ON Semiconductor 

MPSA12

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = 100 mAdc, IB = 0)

Collector Cutoff Current

(VCB= 15 Vdc, IE = 0)

Emitter Cutoff Current

(VEB= 12 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain

(IC = 10 mAdc, VCE = 5.0 Vdc)

Collector −Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.01 mAdc)

Base −Emitter On Voltage

(IC = 10 mAdc, VCE = 5.0 Vdc)

Symbol

Min

Max

Unit

V(BR)CES

ICBO

IEBO

20

−

Vdc

−

100

nAdc

−

100

nAdc

hFE

−

20,000

−

VCE(sat)

−

1.0

Vdc

VBE(on)

−

1.4

Vdc

1.0

0.7

0.5

D = 0.5

0.2

0.3

0.2

0.1

0.1

0.07

0.05

0.03

0.02

0.01

0.1 0.2

0.05

0.5

SINGLE PULSE

SINGLE PULSE

ZqJC(t) = r(t) • RqJC TJ(pk) − TC = P(pk) ZqJC(t)

ZqJA(t) = r(t) • RqJA TJ(pk) − TA = P(pk) ZqJA(t)

1.0 2.0

5.0 10

20

50 100 200

t, TIME (ms)

Figure 2. Thermal Response

500 1.0 k 2.0 k

5.0 k 10 k

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